Formation des Siliciures de Ni-Co en films minces.
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Date
2024
Journal Title
Journal ISSN
Volume Title
Publisher
ECOLE NATIONALE SUPERIEURE DE TECHNOLOGIE ET D’INGENIERIE - ANNABA
Abstract
The development of microelectronic circuits for applications such as 5G and automotive relies on nanometric MOS transistors, where silicide contacts are crucial. Formed by reaction between a metal film and a silicon substrate, these contacts require a precise understanding of the mechanisms of silicide formation (nucleation, reaction, diffusion). For the most advanced technologies, metal alloys replace pure metals to improve the final properties of the contact. Despite numerous studies, fundamental aspects of silicide formation, particularly the link between reactions in thin films and the phase diagram, remain poorly understood. One of the important alloys for microelectronics is the Ni-Co alloy, as nickel silicide (NiSi) and cobalt silicide (CoSi2) are used as contacts. The goal of this internship is to study the formation of silicides in thin films. Conducted within the RDI team at IM2NP, the work carried out during this internship involved studying the reactions in thin films of Ni-Co alloys or Ni/Co bilayers through in situ temperature measurements via X-ray diffraction. The objective was to determine the nature of the formed phases, their texture, and other important characteristics. In parallel, modeling and simulations were conducted to interpret, model, and simulate the formation of silicides. This thesis presents the results obtained, offering a better understanding of the mechanisms of silicide formation in Ni-Co thin film, contributing to the optimization of contacts for advanced microelectronic technologies.